Constructing the coordination environment of Se-O in Cu2-xSe for electrochemical hydrogen evolution.

In this work, a Se-O bond is introduced by a simple oxidation method to realize the structural transformation from Cu2-xSe to Cu2O(SeO3) for enhanced electrocatalytic hydrogen evolution reaction (HER). The experiment and calculation results showed that Cu2O(SeO3) facilitated charge transfer and possessed a small barrier during the HER.

Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance.

Herein, we report the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) and studied the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The improved performances result from the exposed In or Te atoms cluster, which affects the conductivity and active sites. This work provides insights into the comprehensive electrochemical attributes of layered indium chalcogenides and exhibits a new route for catalyst synthesis.

Activating Octahedral Center in Co-Doped NiFe2 O4 via Bridging Amorphous MoSx for Electrocatalytic Water Oxidation: A Case for eg Orbital Regulation in Spinel Oxide.

Moderate eg filling for octahedral metal cations (MOh ) is strongly correlated with the electrocatalytic water oxidation performance in the oxides system. Here, the eg fillings of NiOh and FeOh in NiFe2 O4 -based spinel are controllably regulated by introducing an external radical of catalytically inactive MoSx as an electron acceptor via a novel ultrasonic anchored pyrolysis strategy. The electron occupied in eg orbit of MOh emigrates with the amount of MoS hanging on the apical of octahedral sites, and results in a salutary transition from high to medium eg occupancy state, as confirmed by the X-ray absorption spectroscopy and X-ray photoelectron spectroscopy. In addition, benefiting from the abundant unsaturated S atoms in amorphous MoSx , the MOh at the surface furthest activates and consequently shows a superior water oxidation performance. Density functional theory also reveals that the eg fillings of Ni and Fe decrease to 1.4 and 1.2 after MoSx modification, which can effectively reduce the free energy of the OOH* intermediates in the oxygen evolution reaction process. This work opens an avenue for further releasing the electrocatalytic activity of octahedral sites through bridging external phases with rational electron-capturing/donating capability.

Cobalt-plasma treatment enables structural reconstruction of a CoOx/BiVO4 composite for efficient photoelectrochemical water splitting.

Cobalt-plasma sparked by a pulsed laser was utilized for the first time to modify a BiVO4 photoanode, inducing surface structural reconstruction and CoOx/BiVO4 composite construction. Combining charge redistribution and cobalt, the center of hole accumulation and catalytic activity, the photoanode with optimized charge transfer capacity exhibits a 3 times improvement in photoelectrochemical water oxidation performance.

Large-scale growth of few-layer two-dimensional black phosphorus.

Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness1-4. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation5,6, facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm2 V-1 s-1 at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry.

Insight into the enhanced photoelectrocatalytic activity in reduced LaFeO3 films.

LaFeO3 films, as photoelectrocatalysts, could be slightly reduced by annealing in an oxygen-deficient atmosphere. The introduced oxygen vacancies increase the electrical conductivity and change their surface band structures which endows LaFeO3 films with a higher oxygen evolution reaction current and a lower overpotential.